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      1. 產品與服務
        SiC

        碳化硅肖特基二極管(SiC Schottky Barrier Diode,SiC SBD)

         

        型 號 IF(AV) VRRM VRSM VDC QC IFSM IFRM Ptot TJ VF IR C 封裝形式
        @TJ
        =25℃
        @TJ=25℃ @TJ=25℃ @TJ=25℃,f=1MHz
        Pulse:tp
        =10µs
        @IF(AV) @VRRM @VR
        =0V
        @VR
        =400V
        @VR
        =800V
        @VR
        =1000V
        A V V V nC A A W V μA PF PF PF PF
        tPower-
        SS01•
        JB0BA6E
        20 650 650 650 82.5 -55~+175 2.3 26.3 1900.0 120.0 88.6 TO-247-2L
        tPower-
        SS01•
        JB0XX6E
        20 650 650 650 -55~+175 1.7 26.3
        tPower-
        SS01•
        JC0BA12
        30 1200 1200 1200 180.0 -55~+175 1.37 25 TO-247-2L
        tPower-
        SS01•
        JB5BA17
        25 1700 1700 1700 203 -55~+175 1.39 76.1 3190.0 151.0 139.0 TO-247-2L
        tPower-
        SS01•
        JB5XX17
        25 1700 1700 1700 -55~+175 1.43 76.1
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